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| AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (VGS = -10V) ID = -6.5A RDS(ON) < 46m (VGS = -10V) RDS(ON) < 60m (VGS = -6V) D D D D G DFN 3x2 D D D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG -6.5 -5.3 -25 3.1 2.0 -55 to 150 -4.7 -3.7 1.6 1.0 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady State Steady State RJA RJL Typ 34 66 20 Max 40 80 25 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4413 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = -250A, VGS = 0V VDS = -30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 20V VDS = VGS ID = -250A VGS = -10V, VDS = -5V VGS = -10V, ID = -6.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = -6V, ID = -5.3A Forward Transconductance VDS = -5V, ID = -6.5A IS = -1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.5 -25 38 54 48 11 0.77 -1 -3 668 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 126 92 6 12.7 VGS=-10V, VDS=-15V, ID=-6.5A 6.4 2 4 7.7 VGS=-10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.5A, dI/dt=100A/s 6.8 20 10 22 15 30 9 17 8.5 830 46 65 60 -2 Min -30 -1 -5 100 -2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: June 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 -6V -ID (A) 15 -3.5V -4V 6 -ID(A) 25C 4 -5V -4.5V 8 125C 10 VDS=-5V 10 5 VGS=-2.5V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 80 Normalized On-Resistance 2 -40C 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=-10V ID=-6.5A VGS=-6V ID=-5.3A RDS(ON) (m) 60 VGS=-6V 1.4 1.2 40 VGS=-10V 20 0 2 4 1.0 0.8 IF=-6.5A, dI/dt=100A/s 6 8 10 0.6 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (m) 100 -IS (A) ID=-6.5A 1E+01 1E+00 1E-01 1E-02 125C 125C 80 1E-03 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 60 1E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 25C -40C -40C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-6.5A 1200 1000 Ciss Capacitance (pF) 800 600 400 Coss 200 Crss 0 0 3 6 9 12 15 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics 8 -VGS (Volts) 6 4 2 0 100 10s 1000 RDS(ON) limited TJ(Max)=150C TA=25C 10 -ID (Amps) 1 1ms 10ms 100mss Power (W) 100s 100 10 0.1 TJ(Max)=150C TA=25C DC 10s 0.01 0.1 1 IF=-6.5A, dI/dt=100A/s 10 100 -VDS (Volts) 1 0.00001 0.001 0.1 10 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to Ambient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=66C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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